• Collector to emitter voltage VCES: 360 V
• Gate to emitter voltage VGES: ±30 V
• Collector current IC: 30 A
• Collector peak current ic(peak): 200 A
• Collector to emitter diode Forward peak current iDF(peak): 100 A
• Collector dissipation PC: 20 W
• Junction to case thermal impedance qj-c: 6.25 'CW
• Junction temperature Tj: 150'C
• Storage temperature Tstg: –55 to +150 'C

Дополнительно:

• Trench gate and thin wafer technology (G6H-II series)
• High speed switching: tr =80 ns typ., tf = 150 ns typ.
• Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
• Low leak current: ICES = 1 mA max.
• Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ
• Isolated package: TO-220FL